Method of making resistive memory elements with reduced roughness
AssigneeInfineon Technologies AG
InventorWolfgang Raberg
Life of this patent
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Abstract
A resistive memory element (144), magnetic random access memory (MRAM) device, and methods of manufacturing thereof, wherein a thin oxide layer (132) is disposed within the first metal layer (136) of the memory element (144). The thin oxide layer (132) comprises an oxygen mono-layer. The roughness of subsequently-formed layers (134/118/116) is reduced, and magnetic capabilities of the resistive memory element (144) are enhanced by the use of the thin oxide layer (132) within the first metal layer (136).
Claims17
A method of manufacturing resistive memory elements of a resistive memory device, comprising:
- providing a substrate;
- disposing a first metal layer first portion over the substrate;
- forming a first thin oxide layer over the first metal layer first portion, the first thin oxide layer comprising a mono-layer of O2 molecules;
- disposing a first metal layer second portion over the thin oxide layer;
- forming a tunnel layer over the first metal layer second portion;
- and
- disposing a second metal layer over the tunnel layer, wherein the second metal and first metal layers comprise a plurality of ferromagnetic metal layers.
A method of manufacturing a resistive memory device, comprising:
- providing a semiconductor substrate;
- forming a plurality of a plurality of first conductive lines parallel to one another in a first direction over the substrate;
- disposing a plurality of resistive memory elements over the first conductive lines, the resistive memory elements including a first metal layer having a thin oxide layer disposed therein, the first thin oxide layer comprising a mono-layer of O2 molecules;
- and
- forming a plurality of second conductive lines over the resistive memory elements, the second conductive lines being positioned parallel to one another in a second direction.
A method of manufacturing resistive memory elements of a resistive memory device, comprising:
- providing a substrate;
- disposing a first metal layer first portion over the substrate;
- forming a first thin oxide layer over the first metal layer first portion, the first thin oxide layer comprising approximately 2 Angstroms of oxygen;
- disposing a first metal layer second portion over the thin oxide layer;
- forming a tunnel layer over the first metal layer second portion;
- and
- disposing a second metal layer over the tunnel layer, wherein the second metal and first metal layers comprise a plurality of ferromagnetic metal layers.
A method of manufacturing a resistive memory device, comprising:
- providing a semiconductor substrate;
- forming a plurality of a plurality of first conductive lines parallel to one another in a first direction over the substrate;
- disposing a plurality of resistive memory elements over the first conductive lines, the resistive memory elements including a first metal layer having a thin oxide layer disposed therein, the first thin oxide layer comprising approximately 2 Angstroms of oxygen;
- and
- forming a plurality of second conductive lines over the resistive memory elements, the second conductive lines being positioned parallel to one another in a second direction.
Dependencies are inferred from the claim text.