Substrate for a transfer mask, transfer mask, and method of manufacturing the transfer mask
AssigneeToppan Printing Co., Ltd.
InventorsToshio Konishi, Akira Tamura, Kojiro Ito, Yushin Sasaki, Hideyuki Eguchi
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Abstract
A substrate for a transfer mask, which comprises a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm, and a second silicon layer formed on the silicon oxide film. A transfer mask which is manufactured by making use of this substrate is featured in that it is possible to prevent a transfer pattern from being cracked or destroyed due to stress from the silicon oxide film on the occasion of manufacturing the transfer mask, thereby providing a defect-free transfer mask.
Claims13
A substrate for a transfer mask, which comprises a first silicon layer formed of monocrystalline silicon;
- a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm;
- and a second silicon layer formed on the silicon oxide film.
A transfer mask comprising a first silicon layer formed of monocrystalline silicon;
- a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm;
- and a second silicon layer formed on the silicon oxide film and bearing therein a transfer pattern;
- wherein openings are formed in said first silicon layer, and the portions of said silicon oxide film which correspond to said openings are removed.
A method of manufacturing a transfer mask, the method comprising:
- preparing a substrate comprising a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm, and a second silicon layer formed on the silicon oxide film;
- forming a transfer pattern on said second silicon layer;
- forming openings in said first silicon layer before or after forming said transfer pattern;
- and
- selectively removing portions of said silicon oxide film which correspond to said openings.
A method of manufacturing a transfer mask, the method comprising:
- preparing a substrate comprising a first silicon layer formed of monocrystalline silicon, a silicon oxide film formed on the first silicon layer and having a thickness ranging from 0.2 to 0.8 μm, and a second silicon layer formed on the silicon oxide film;
- forming openings in said first silicon layer;
- selectively removing portions of said silicon oxide film which correspond to said openings;
- and
- forming a transfer pattern in said second silicon layer.
Dependencies are inferred from the claim text.