Method and apparatus for designing EB mask
AssigneeNEC Electronics Corporation
InventorHideo Kobinata
Life of this patent
Estimating the term…
Abstract
In the method of designing EB (electron beam) mask, it includes the steps of (a) to (d). The step of (a) is the step of dividing an integrated circuit pattern into two complementary patterns. The step of (b) is the step of scanning around one, as an object pattern, of small patterns included in one of the two complementary patterns, while measuring a distance from the object pattern to the small patterns adjacent to the object pattern. The step of (c) is the step of registering a minimum of distances from the object pattern to the adjacent small patterns. The step of (d) is the step of changing a shape of at least one of the small patterns based on the minimum distance.
Claims12
A method of designing EB (electron beam) mask, comprising the steps of:
- (a) dividing an integrated circuit pattern into two complementary patterns;
- (b) scanning around one, as an object pattern, of small patterns included in one of said two complementary patterns, while measuring a distance from said object pattern to said small patterns adjacent to said object pattern;
- (c) registering a minimum of distances from said object pattern to said adjacent small patterns;
- and
- (d) changing a shape of at least one of said small patterns based on said minimum distance.
An apparatus for designing EB mask comprising:
- a memory;
- and
- a processor which:
- divides an integrated circuit pattern into two complementary patterns;
- scans around one, as an object pattern, of small patterns included in one of said two complementary patterns, while measures a distance from said object pattern to said small patterns adjacent to said object pattern;
- registers a minimum of distances from said object pattern to said adjacent small patterns in said memory;
- and
- changes a shape of at least one of said small patterns based on said minimum distance.
Dependencies are inferred from the claim text.