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US 6,638,445 B2Granted
Silicon dioxide etch process which protects metals
AssigneeMicron Technology, Inc.
InventorsRobert T. Rasmussen, Surjit S. Chadha, David A. Cathey
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Abstract
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.
Claims4
An etchant for a pretreated semiconductor material having a metal component comprising:
- from about 0.03 to about 0.06 percent by weight surfactant to protect the metal component of the semiconductor material from corrosion;
- from about 15 to about 30 percent by weight buffered oxide etch;
- and
- from about 2 to about 4 percent by weight salt, the amount of salt being in excess of a solubility limit for the etchant.
1 more element
Dependencies are inferred from the claim text.