Deposition of smooth aluminum films
AssigneeMicron Technology, Inc.
InventorKanwal K. Raina
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Abstract
This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 μΩ-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.
Claims20
A method of forming an electrically conductive metal film for an integrated circuit, comprising:
- depositing an aluminum layer onto a substrate;
- and
- suppressing hillock formation by introducing nitrogen into the aluminum layer while depositing the layer;
- wherein the introduction of nitrogen produces an atomic composition of about 2% to 10% nitrogen in the aluminum film.
A hillock-suppressing, electrically conductive aluminum film in an integrated circuit, comprising aluminum grains and an atomic composition of about 2% to 10% nitrogen.
Dependencies are inferred from the claim text.