Loading patent…
AssigneesSharp Kabushiki Kaisha, Tadahiro Ohmi
InventorsNaoko Yamamoto, Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
Estimating the term…
A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.
A plasma process apparatus for processing a surface of a substrate using a reaction gas converted to a plasma by microwaves, said plasma process apparatus comprising:
Dependencies are inferred from the claim text.