Semiconductor laser device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHisashi Nakayama, Masahiro Kito, Masato Ishino, Yasushi Matsui
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Abstract
A semiconductor laser device includes a substrate, a p-type cladding layer and a n-type cladding layer provided on the substrate, and an active layer provided between the p-type cladding layer and the n-type cladding layer, having at least two barrier layers and at least two well layers, the barrier layers and the well layers being disposed alternately. Band offsets in a conduction band between the barrier layers and the well layers are provided so as to increase from the n-type cladding layer aide toward the p-type cladding layer side.
Claims33
A semiconductor laser device comprising;
- a substrate;
- a p-type cladding layer and a n-type cladding layer on the substrate;
- and
- an active layer, between the p-type cladding layer and the n-type cladding layer, including at least two barrier layers having the same first thicknesses and at least two well layers having the same second thicknesses, the at least two barrier layers and the at least two well layers being laminated and disposed alternately,
- wherein the strain amount of the at least two barrier layers decreases from the n-type cladding layer side toward the p-type cladding layer side according to the alternately disposed laminated barrier layers and the strain amount of the at least two well layers increases from the n-type cladding layer side toward the p-type cladding layer side such that band offsets in a conduction band between the at least two barrier layers and the at least two well layers increase from the n-type cladding layer side toward the p-type cladding layer side according to the other alternately disposed laminated well layers.
A semiconductor laser device comprising;
- a substrate;
- a p-type cladding layer and a n-type cladding layer on the substrate;
- and
- an active layer, between the p-type cladding layer and the n-type cladding layer, including at least two barrier layers having the same first thicknesses and at least two well layers having the same second thicknesses, the at least two barrier layers and the at least two well layers being laminated and disposed alternately,
- wherein the strain amount of the at least two barrier layers decreases from the n-type cladding layer side toward the p-type cladding layer side according to the alternately disposed laminated barrier layers and the strain amount of the at least two well layers increases from the n-type cladding layer side toward the p-type cladding layer side such that band offsets in a valence band between the at least two barrier layers and the at least two well layers decrease from the n-type cladding layer side toward the p-type cladding layer side according to the other alternately disposed laminated well layers.
Dependencies are inferred from the claim text.