Information recording medium and information recording device

The information-recording medium in which information (recording mark) is recorded in response to a variation in atomic arrangement and/or variation of electronic state through radiation of energy beams moved relatively to each other in relative moving directions, wherein:

• there are provided a plurality of information recording tracks in parallel with said relative moving directions;
• there is provided a step between said information recording tracks;
• one or more types of information recording thin films are provided as recording layers;
• sides of the recording layers opposite to an energy beam incident side are provided with one or more types of heat sink control layers and a heat sink layer;
• a sum of film thickness of said one or more types of information recording thin films provided as said recording layers is equal to or less than said step between said information recording tracks;
• a sum of film thickness of said one or more types of heat sink control layers is equal to or more than said step between said information recording tracks;
• recording of information (a recording mark) is carried out through changing from a crystalline state to an amorphous state and/or from an amorphous state to a crystalline state as changing of said atomic arrangement is performed;
• and
• a rate of inclusion of an S element in at least one type of heat sink control layer of said heat sink control layers is lower than a rate of inclusion of said S element present in at least one other heat sink control layer of said heat sink control layers, and there is provided a thermal buffer layer present between said heat sink control layer and said heat sink layer.

The information-recording medium in which information (recording mark) is recorded in response to a variation in atomic arrangement and/or variation of electronic state through radiation of energy beams moved relatively to each other in relative moving directions, wherein:

• there are provided a plurality of information recording tracks in parallel with said relative moving directions;
• there is provided a step between said information recording tracks;
• one or more types of information recording thin films are provided as recording layers;
• sides of the recording layers opposite to an energy beam incident side are provided with one or more types of heat sink control layers and a heat sink layer;
• a sum of film thickness of said one or more types of information recording thin films provided as said recording layers is equal to or less than said step between said information recording tracks;
• a sum of film thickness of said one or more types of heat sink control layers is equal to or more than said step between said information recording tracks;
• recording of information (a recording mark) is carried out through changing from a crystalline state to an amorphous state and/or from an amorphous state to a crystalline state as changing of said atomic arrangement is performed;
• where there are provided at least a plurality of heat sink control layers, a rate of inclusion of an S element in at least one type of heat sink control layer of said heat sink control layers is lower than a rate of inclusion of said S element present in at least one other heat sink control layer of said heat sink control layers, and where there is provided an interface layer present in contact with said recording layer.