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AssigneeSamsung Electronics Co., Ltd.
InventorsDuk-ha Park, Byung-sick Moon
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A semiconductor memory device internal voltage generator and internal voltage generating method are disclosed. The device and method are capable of supplying a uniform amount of electric charge and generating a stable internal voltage, despite variations in an external voltage. The internal voltage generator includes a PMOS driving transistor having a source connected to the external voltage, a gate connected to a driving signal, and a drain that supplies the internal voltage. The interval voltage generator also includes a driving signal generator that generates the driving signal in response to a control signal. The driving signal generator maintains a voltage between the gate and source of the PMOS driving transistor at a substantially uniform voltage level despite variations in the external voltage.
A semiconductor memory device having an internal voltage generator to generate an internal voltage from an external voltage, the internal voltage lower than the external voltage, the internal voltage generator comprising:
A semiconductor memory device having an internal voltage generator to generate an internal voltage from an external voltage, the internal voltage lower than the external voltage, the internal voltage generator comprising:
A semiconductor memory device internal-voltage-generating method for generating an internal voltage having a voltage level lower than an external voltage, the method comprising:
A method of controlling a semiconductor memory device internal voltage generator having a PMOS driving transistor with a source connected to an external voltage and a drain that supplies an internal voltage, the method comprising:
Dependencies are inferred from the claim text.