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US 6,636,440 B2Granted
Method for operation of an EEPROM array, including refresh thereof
AssigneeSaifun Semiconductors Ltd.
InventorsEduardo Maayan, Ron Eliyahu, Shai Eisen, Boaz Eitan
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Abstract
A method for operating an electrically erasable programmable read only memory (EEPROM) array, the method including refreshing a threshold voltage of a bit of a memory cell in an EEPROM array, the threshold voltage being different than a previous threshold voltage, by restoring the threshold voltage of the bit at least partially back to the previous threshold voltage.
Claims36
A method for operating a non-volatile memory array, the method comprising:
- performing an operation on a first bit of a first memory cell within said array;
- correlating each operation performed on said first bit with a set of cells in proximity with said first cell whose threshold voltages may have been disrupted by the operation on said first bit;
- and
- refreshing a threshold voltage of a second bit of a second memory cell which is within said set of cells and whose threshold voltage has changed from a previous threshold voltage, by restoring the threshold voltage of said second bit at least partially back to the previous threshold voltage.
1 more element
In a non-volatile memory array having a plurality of memory cells, the method comprising:
- performing an operation on a first bit of a first memory cell within said array;
- correlating each operation performed on said first bit with a set of cells in proximity with said first cell whose threshold voltages may have been disrupted by the operation on said first bit;
- and
- refreshing a threshold voltage of a second bit of a second memory cell which is within said set of cells and whose threshold voltage has changed from a previous threshold voltage, by restoring the threshold voltage of said second bit at least partially back to the previous threshold voltage.
1 more element
Dependencies are inferred from the claim text.