Ferroelectric memory cell array and method of storing data using the same

A method of storing data using a ferroelectric memory cell array, said ferroelectric memory cell array including a plurality of word lines located in rows;

• a plurality of bit lines located in columns;
• a plurality of memory cells connected between said word lines and said bit lines, in which each of said memory cells is composed of a well formed in a substrate;
• a thin ferroelectric film formed on said substrate over said well;
• a gate formed on said thin ferroelectric film;
• and a source and a drain formed in said well at both sides of said gate, a common source line connected to sources of said memory cells;
• and a plurality of well lines each connected to corresponding one of wells of said memory cells,
• said method, comprising the steps of:
• selecting a memory cell by applying a given bias voltage to a selected word line and a bit line in order to store data into a selected memory cell of said ferroelectric memory cell array;
• and
• writing data into said selected memory cell using the difference in the voltage between the selected word line and the well line,
• wherein upon said writing operation, a voltage applied to the selected word line is shifted from the supply power to the ground voltage, and a voltage applied to the well lines is shifted from the ground voltage to the supply power and then shifted to the ground voltage.

A ferroelectric memory cell array comprising:

• a plurality of word lines and bit lines arranged in rows and columns;
• a plurality of ferroelectric memory cells connected between said word lines and said bit lines;
• and
• a plurality of well lines each connected to each well of said memory cells and being electrically isolated from each other.