Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus

A magnetic head, comprising a magnetoresistance effect device having a magnetoresistance effect film, the magnetoresistance effect film including:

• an antiferromagnetic film;
• a first ferromagnetic FILM disposed on the antiferromagnetic film;
• an intermediate layer including at least one chosen from an oxide a nitride, a carbide, and a fluoride, of a material of the first ferromagnetic film;
• a second ferromagnetic film disposed on the intermediate layer, wherein the magnetization direction of the second ferromagnetic film is substantially fixed;
• a non-magnetic film disposed on the second ferromagnetic film;
• and
• a third ferromagnetic film disposed on the non-magnetic film, wherein the magnetization direction of the third ferromagnetic film is free to rotate in an applied magnetic field, the second ferromagnetic film is exchange coupled with the first ferromagnetic film via the intermediate layer.

A magnetic storing apparatus, comprising:

• a magnetoresistance effect device having a magnetoresistance effect film,
• a write electrode configured to write information by applying a current magnetic field to the magnetoresistance effect device;
• a read electrode composed of an electrode of the magnetoresistance effect device, the read electrode being configured to reproduce the information stored in the magnetoresistance effect film,
• the magnetoresistance effect film including:
• an antiferromagnetic film;
• a first ferromagnetic film disposed on the antiferromagnetic film;
• an intermediate layer including at least one chosen from an oxide, a nitride, a carbide, and a fluoride, of a material of the first ferromagnetic film, being disposed on the first ferromagnetic film;
• a second ferromagnetic film disposed on the intermediate layer, wherein the magnetization direction of the second ferromagnetic film is substantially fixed;
• a non-magnetic film disposed on the second ferromagnetic film;
• and
• a third ferromagnetic film disposed on the non-magnetic film, wherein the magnetization direction of the third ferromagnetic film is free to rotate in an applied magnetic field, the second ferromagnetic film is exchange coupled with the first ferromagnetic film via the intermediate layer.

A magnetoresistance effect device, comprising a magnetoresistance effect film, the magnetoresistance effect film having:

• an antiferromagnetic film;
• a first ferromagnetic film disposed on the antiferromagnetic film;
• an intermediate layer disposed on the first ferromagnetic film, the intermediate layer formed by at least one of oxidation, nitridation, carbonization and fluoridation treatment of a surface of the first ferromagnetic film;
• a second ferromagnetic film disposed on the intermediate layer, a magnetization direction of the second ferromagnetic film being substantially fixed;
• a non-magnetic film disposed on the second ferromagnetic film;
• and
• a third ferromagnetic film disposed on the non-magnetic film, a magnetization direction of at least a part of the third ferromagnetic film being free to rotate in an applied magnetic field.

A magnetic head, comprising a magnetoresistance effect device having a magnetoresistance effect film, the magnetoresistance effect film including:

• an antiferromagnetic film;
• a first ferromagnetic film disposed on the antiferromagnetic film;
• an intermediate layer disposed on the first ferromagnetic film, the intermediate layer formed by at least one of oxidation, nitridation, carbonization, and fluoridation treatment, of a surface of the first ferromagnetic film;
• a second ferromagnetic film disposed on the intermediate layer, wherein a magnetization direction of the second ferromagnetic film is substantially fixed;
• a non-magnetic film disposed on the second ferromagnetic film;
• and
• a third ferromagnetic film disposed on the non-magnetic film, wherein a magnetization direction of at least a part of the third ferromagnetic film is free to rotate in an applied magnetic field.

A magnetic storing apparatus, comprising:

• a magnetoresistance effect device having a magnetoresistance effect film,
• a write electrode configured to store information to the magnetoresistance effect film of the magnetoresistance effect device;
• a read electrode composed of an electrode of the magnetoresistance effect device, the read electrode being configured to reproduce the information stored in the magnetoresistance effect film,
• the magnetoresistance effect film including:
• an antiferromagnetic film;
• a first ferromagnetic film disposed on the antiferromagnetic film;
• an intermediate layer disposed on the first ferromagnetic film, the intermediate layer formed by at least one of oxidation, nitridation, carbonization, and fluoridation treatment, of a surface of the first ferromagnetic film, being disposed on the first ferromagnetic film;
• a second ferromagnetic film disposed on the intermediate layer, wherein the magnetization direction of the second ferromagnetic film is substantially fixed;
• a non-magnetic film disposed on the second ferromagnetic film;
• and
• a third ferromagnetic film disposed on the non-magnetic film, wherein the magnetization direction of the third ferromagnetic film is free to rotate in an applied magnetic field.