Method of measuring photoresist and bump misalignment

A method comprising:

• (a) providing a semiconductor device having a plurality of spaced apart misalignment ruler markers formed therein for measuring the misalignment of an opening in a removable layer in the X and Y directions, and a bond pad formed therein;
• (b) depositing a removable layer over the semiconductor device, and wherein the removable layer includes an opening formed therein down to the bond pad;
• (c) measuring the misalignment of the opening in the removable layer by counting the number of misalignment ruler markers exposed by the opening in the removable layer in the X- direction and in the Y- direction;
• (d) determining if the measured misalignment is within an acceptable tolerance range;
• (e) if the measured misalignment is outside of the acceptable tolerance range, and then removing the removable layer, adjusting the process equipment and tools to compensate for the measured misalignment of the opening in the removable layer, and repeating acts b-d until the measured misalignment of the opening is within acceptable tolerance range;
• (f) if the measured misalignment of the opening is within an acceptable tolerance range then performing the acts g-i;
• (g) depositing an electrically conductive bump material into the opening in the removable layer;
• (h) removing the removable layer;
• and
• (i) reflowing the electrically conductive bump material to form a bump on the semiconductor device.