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US 6,636,294 B2Granted
Microdevice and structural components of the same
AssigneeCanon Kabushiki Kaisha
InventorTetsunobu Kochi
Life of this patent
Estimating the term…
Abstract
A device having a substrate and a pattern structure formed on the substrate in accordance with plural processes including a multiple exposure process having (i) a step for photoprinting a fine stripe pattern on the substrate and (ii) a step for photoprinting a predetermined mask pattern on the substrate, such that the fine stripe pattern and the mask pattern are printed superposedly, wherein, in the pattern structure, a particular structural portion of the device is disposed in a portion where the fine stripe pattern and the mask pattern are printed superposedly.
Claims15
A device manufacturing method, comprising:
- a multiple exposure process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes plural gate regions formed on a semiconductor active region, and when the linewidth and the spacing is L, the gate regions have a pitch being substantially equal to a product of 2L as multiplied by an integer.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure apparatus process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes contact regions formed on a semiconductor active region, and when the linewidth and the spacing is L, those contact regions which are formed on different semiconductor active regions have a spacing being substantially equal to (2n−1)L, where n is an integer not less than 3.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes contact regions formed on a gate wiring region, and when the linewidth and the spacing is L, the contact regions have a spacing being substantially equal to (2n−1)L, where n is an integer not less than 2.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure process for a substrate for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes a first contact region formed on a gate wiring region, and a second contact region formed on a semiconductor active region, and when the linewidth and the spacing is L, the first and second contact regions have a spacing being substantially equal to (2n−1)L, where n is an integer not less than 2.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes contact regions formed on a semiconductor active region, and when the linewidth and the spacing is L, those contact regions have a spacing being substantially equal to (2n−1)L, where n is an integer not less than 2.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes a contact region formed on a gate wiring region, and when the linewidth and the spacing is L, an outside periphery of the gate wiring region is disposed with a deviation of about 0.5L outwardly from an outside periphery of the contact region.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes a contact region and a wiring region formed on the contact region, and when the linewidth and the spacing is L, an outside periphery of the wiring region is disposed with a deviation of about 0.5L outwardly from an outside periphery of the contact region.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes a plurality of gate wiring regions, and when the linewidth and spacing is L, the gate wiring regions have a spacing being substantially equal to a product of 2L as multiplied by an integer.
3 more elements
A device manufacturing method, comprising:
- a multiple exposure process for a substrate, for photoprinting a pattern on the substrate from which pattern a pattern structure for the device can be produced, said multiple exposure process including (i) a first exposure for photoprinting a stripe pattern on the substrate with an exposure amount less than an exposure threshold, wherein a linewidth and a spacing of the stripe pattern are substantially equal to each other, and (ii) a second exposure for photoprinting, on the substrate, a separate pattern different from the stripe pattern, with an exposure amount including a portion less than the exposure threshold;
- and
- a development process for developing the exposed substrate,
- wherein the patterns by the first and second exposures are superposed one upon another without a development process intervening between the first and second exposures,
- wherein the first and second exposures are carried out superposedly such that an exposure amount in a region where the first and second exposures are made superposed is not less than the exposure threshold, and
- wherein the pattern structure includes a plurality of wiring regions on a contact region, and when the linewidth and the spacing is L, the wiring regions have a spacing being substantially equal to a product of 2L as multiplied by an integer.
3 more elements
Dependencies are inferred from the claim text.