System and method for providing an electro-optical device having light shield layers

An electro-optical device, comprising:

• a pair of substrates;
• an electro-optical material interposed between said pair of substrates;
• a plurality of pixel electrodes arranged in a matrix on one of said substrates;
• a plurality of thin-film transistors respectively electrically connected to said pixel electrodes;
• a light shield layer which is arranged over said plurality of thin-film transistors above the one substrate and is a laminate of a light absorption sublayer and a light shield sublayer, wherein said light absorption sublayer is formed on a side of said light shield layer facing said thin-film transistors, and said light shield sublayer is formed on a side of said light shield layer opposite to said plurality of thin-film transistors;
• a data line electrically connected to said thin-film transistors and intersecting said light shield layer;
• and
• a junction of a channel region of said thin-film transistor which is formed within an area in which said light shield layer overlaps said data line.

An electro-optical device, comprising:

• a pair of substrates;
• an electro-optical material interposed between said pair of substrates;
• a plurality of pixel electrodes arranged in a matrix on one of said substrates;
• a plurality of thin-film transistors respectively electrically connected to said pixel electrodes;
• an upper light shield layer having a crossing portion above said thin-film transistor above said one substrate;
• a lower light shield layer having a crossing portion beneath said thin-film transistor on said one substrate, and formed within a formation area of said upper light shield layer;
• and
• a junction of a channel region of said thin-film transistors formed within an area in which the crossing portion of said upper light shield layer and the crossing portion of said lower light shield layer overlap, wherein said upper light shield layer includes a storage capacitor line.