US 6,636,118 B1 · High-frequency power amplification module and radio communication device

Abstract

In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.

Claims39

Dependent claims

A high frequency power amplifier module comprising:

an input terminal;
an output terminal;
a first voltage terminal;
a second voltage terminal;
a bias supply terminal;
a first semiconductor amplifying device having a control terminal connected to the input terminal and the bias supply terminal, a first terminal connected to the first voltage terminal, and a second terminal connected to the second voltage terminal, for supplying a signal according to a signal supplied to the input terminal from the first terminal to the output terminal;
and
a first protection circuit including a plurality of devices which are coupled between the first terminal and a predetermined voltage node in series so as to have a rectifying characteristic in a forward direction in accordance with a voltage at the first terminal, each of which is different from a parasitic device existing in the first semiconductor amplifying device, and each of which is formed on a semiconductor substrate with the first semiconductor amplifying device.

5 more elements

A wireless communication apparatus comprising:

an antennae;
and
a high frequency power amplifying module connected to the antenna,
the high frequency power amplifying module comprising:
an input terminal;
an output terminal;
a first voltage terminal:
a second voltage terminal;
a bias supply terminal;
a first semiconductor amplifying device having a control terminal connected to the input terminal and the bias supply terminal, a first terminal connected to the first voltage terminal, and a second terminal connected to the second voltage terminal, for supplying a signal according to a signal supplied to the input terminal from the first terminal to the output terminal;
and
a first protection circuit including a plurality of devices which are coupled between the first terminal and a predetermined voltage node in series so as to have a rectifying characteristic in a forward direction in accordance with a voltage at the first terminal, each of which is different from a parasitic device existing in the first semiconductor amplifying device, and each of which is formed on a semiconductor substrate with the first semiconductor amplifying device.

9 more elements

A high frequency power amplifier module comprising:

an input terminal;
an output terminal to be coupled to an antenna;
a first semiconductor amplifying device having a control terminal coupled to the input terminal and the first terminal coupled to the output terminal, and providing an output signal according to a signal supplied to the input terminal to the output terminal;
and
a first protection circuit coupled between the first terminal of the first semiconductor amplifying device and a predetermined voltage node and including a plurality of devices which are coupled between the first terminal and the predetermined voltage node in series so as to have a rectifying characteristic in a reverse direction for a voltage at the first terminal, each of which is different from a parasitic device existing in the first semiconductor amplifying device and each of which is formed on a semiconductor substrate with the first semiconductor amplifying device.

2 more elements

Dependencies are inferred from the claim text.

High-frequency power amplification module and radio communication device

Life of this patent

High-frequency power amplification module and radio communication device

Life of this patent

Abstract

Claims39