Semiconductor integrated circuit

A semiconductor integrated circuit comprising MOSFETs having low threshold voltages of at least one type of N channel- and P channel-types, wherein:

• at least one set of MOSFETs included in a plurality of MOSFETs, which are provided in a channel between a high potential power line and a low potential power line, includes first through third MOSFETs of the same channel-type;
• the first through third MOSFETs are serially connected;
• respective gate electrodes of the first and third MOSFETs are connected to each other;
• and
• a gate electrode of the second MOSFET is connected to a section of the semiconductor integrated circuit which has a sufficient potential to turn on the second MOSFET.

A semiconductor integrated circuit comprising MOSFETs having low threshold voltages of at least one of N channel- and P channel-types, wherein:

• at least one set of MOSFETs included in a plurality of MOSFETs, which are provided in a channel between a high potential power line and a low potential power line, includes first through third MOSFETs of the same channel-type;
• the first through third MOSFETs are serially connected;
• respective gate electrodes of the first and third MOSFETs are connected to each other;
• and
• a gate electrode of the second MOSFET receives a control signal differing from an input to the respective gate electrodes of the first and third MOSFETs.