Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof
AssigneeInteruniversitair Micro-Elektronica Centrum (IMEC vzw)
InventorsKaren Maex, Mikhail Rodionovich Baklanov, Serge Vanhaelemeersch
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Abstract
The present invention is related to a metallization structure on a fluorine-containing dielectric. This metallization structure includes a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt, and Pd. The barrier layer includes at least a first part, being positioned between the fluorine-containing dielectric and the conductive pattern, the first part containing at least a first and a second sub-layer, the first sub-layer contacting the fluorine-containing dielectric being impermeable for fluorine.
Claims21
A metallization structure comprising:
- a conductive pattern;
- a fluorine-containing dielectric;
- and
- a barrier layer comprising at least a first part, being positioned between said fluorine-containing dielectric and said conductive pattern, said first part comprising a first sub-layer of a conductive material and a second sub-layer of a fluoride of said conductive material adjacent to said fluorine-containing dielectric, wherein said second sub-layer inhibits out-diffusion of fluorine from said fluorine-containing dielectric.
A method for fabricating a metallization structure on a substrate comprising the steps of:
- depositing a layer of a conductive material on at least one exposed surface of a fluorine-containing dielectric formed on said substrate;
- allowing the reaction between said layer of said conductive material and said fluorine-containing dielectric to thereby form a layer of a fluoride of said conductive material at the interface between said layer of said conductive material and said fluorine-containing dielectric, wherein said layer of said fluoride of said conductive material inhibits out-diffusion of fluorine from said fluorine-containing dielectric;
- and
- depositing at least one metal on said layer of said conductive material.
Dependencies are inferred from the claim text.