Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKazumi Inoh, Shigeru Kawanaka, Yoshihiro Minami, Yasuhiro Katsumata
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Abstract
A semiconductor device comprises: a semiconductor substrate; an insulating layer provided on said semiconductor substrate; a first semiconductor layer provided on said insulating layer; a plurality of openings penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate; and second semiconductor layers filling said openings by selective growth and connected to said semiconductor substrate, wherein areal sizes of said plurality of openings are substantially equal to each other.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- a first semiconductor layer provided on said insulating layer;
- a plurality of openings penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate;
- and
- second semiconductor layers filling said openings by selective growth and connected to said semiconductor substrate,
- wherein areal sizes of said plurality of openings are substantially equal to each other, and
- a difference between maximum and minimum areal sizes of said plurality of openings falls within 10% of the minimum areal size thereof.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- a first semiconductor layer provided on said insulating layer;
- and
- an opening penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate,
- wherein a marking element is formed on the surface of said semiconductor surface that is exposed within said opening.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- a first semiconductor layer provided on said insulating layer;
- an opening penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate;
- and
- a second semiconductor layer filling said opening by selective growth and connected to said semiconductor substrate,
- wherein a marking element is formed on the surface of said second semiconductor layer within said opening.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- a first semiconductor layer provided on said insulating layer;
- a plurality of openings penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate;
- and
- second semiconductor layers filling said openings by selective growth and connected to said semiconductor substrate,
- wherein a marking elements formed on the surface of said second semiconductor layer within a part of said plurality of openings,
- at least any one category of devices such as DRAM cells, DRAM macro cells, DRAM sense amplifiers, SRAM sense amplifiers, transistors for analog circuits and I/O transistors, are provided on the surface of the rest of said plurality of second semiconductor layers, and
- areal sizes of said plurality of openings are substantially equal to each other.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- a first semiconductor layer provided on said insulating layer;
- a plurality of second semiconductor layers which lead from vicinity of a surface of said first semiconductor layer to said semiconductor substrate;
- wherein a difference among maximum and minimum areal sizes of said second semiconductor layers fails within 10% of the minimum areal size thereof.
Dependencies are inferred from the claim text.