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US 6,635,951 B1Granted
Small electrode for chalcogenide memories
AssigneeMicron Technology, Inc.
InventorRussell C. Zahorik
Life of this patent
Estimating the term…
Abstract
An ultra-small electrode or plug contact for use in chalcogenide memory cells specifically, and in semiconductor devices generally. The ultra-small electrode is fabricated by a technique in which disposable spacers are utilized to fabricate ultra-small pores into which the electrodes are formed. The electrodes thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.
Claims10
A chalcogenide memory cell comprising:
- a conductive substrate;
- a layer of a insulative material including an electrode formed on the conductive substrate, the electrode fabricated by a process comprising:
- onto the conductive substrate material;
- forming an edge feature in the layer of the first material;
- applying a layer of the insulative material onto the edge feature of the layer of the first material and the conductive substrate;
- applying a layer of a third material onto the layer of the insulative material;
- removing a portion of the layer of the third material;
- and
- removing a portion of the layer of the insulative material to define a pore in the layer of the insulative material;
- applying a layer of a first conductive material into the pore to define an electrode in the layer of the insulative material;
- a layer of a chalcogenide material formed on the electrode;
- and
- a layer of a second conductive material formed on the layer of the chalcogenide material.
10 more elements
Dependencies are inferred from the claim text.