Boron incorporated diffusion barrier material
AssigneeMicron Technology, Inc.
InventorsVishnu K. Agarwal, Gurtej S. Sandhu
Life of this patent
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Abstract
A diffusion barrier layer comprising TiNxBy is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers formed by CVD.
Claims18
An integrated circuit structure comprising:
- a dielectric layer;
- a conductive layer above the dielectric layer wherein the conductive layer has at least some fluorine atoms or ions therein;
- a TiNxBy barrier layer between the conductive layer and the dielectric layer, wherein the TiNxBy barrier layer is formed from a TiN layer treated at an elevated temperature with a boron-containing gas, wherein the x-factor is in the range of about 0.2 to 0.499 and the y-factor is in the range of about 0.01 to 10;
- and
- a polysilicon layer overlying the dielectric layer, wherein the TiNxBy layer is between the dielectric layer and the polysilicon layer, and wherein the TiNxBy barrier layer inhibits diffusion of the fluorine atoms or ions from the conductive layer into the dielectric layer.
A gate in an integrated circuit comprising:
- a dielectric layer;
- a TiNxBy layer formed over at least a portion of the dielectric layer, wherein the TiNxBy barrier layer is formed from a TiN layer treated at an elevated temperature with a boron-containing gas, wherein the x-factor is in the range of about 0.25 to 0.48 and the y-factor is in the range of about 0.1 to 3;
- a tungsten layer formed over at least a portion of the TiNxBy layer and having at least some fluorine atoms or ions therein;
- and
- a polysilicon layer formed between the TiNxBy layer and the tungsten layer, and wherein the TiNxBy barrier layer inhibits diffusion of the fluorine atoms or ions from the tungsten layer into the dielectric layer.
A gate in an integrated circuit comprising:
- a dielectric layer;
- a polysilicon layer formed over at least a portion of the dielectric layer;
- a diffusion barrier layer comprising TiNxBy formed over at least a portion of the polysilicon layer, wherein the diffusion barrier layer is formed from a TiN layer treated at an elevated temperature with a boron-containing gas, wherein the x-factor is in the range of about 0.2 to 0.499 and the y-factor is in the range of about 0.01 to 10;
- and
- a tungsten layer formed over at least a portion of the diffusion barrier layer, wherein the tungsten layer has at least some fluorine atoms or ions therein, and wherein the diffusion barrier layer inhibits diffusion of the fluorine atoms or ions from the tungsten layer into the polysilicon layer.
An integrated circuit structure comprising:
- a dielectric layer;
- a conductive layer above the dielectric layer wherein the conductive layer has at least some fluorine atoms or ions therein;
- and
- a TiNxBy barrier layer between the conductive layer and the dielectric layer, wherein the TiNxBy barrier layer is formed from a TiN layer treated at an elevated temperature with a boron-containing gas, wherein the x-factor is in the range of about 0.2 to 0.499 and the y-factor is in the range of about 0.01 to 10, and wherein the TiNxBy barrier layer inhibits diffusion of the fluorine atoms or ions from the conductive layer into the dielectric layer.
A gate in an integrated circuit comprising:
- a dielectric layer;
- a TiNxBy layer formed over at least a portion of the dielectric layer, wherein the TiNxBy layer is formed from a TiN layer treated at an elevated temperature with a boron-containing gas, wherein the x-factor is in the range of about 0.25 to 0.48 and the y-factor is in the range of about 0.1 to 3;
- and
- a tungsten layer formed over at least a portion of the TiNxBy layer, the tungsten layer having fluorine atoms or ions therein, wherein the TiNxBy layer inhibits diffusion of the fluorine atoms or ions from the tungsten layer into the dielectric layer.
Dependencies are inferred from the claim text.