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US 6,635,929 B2Granted
Uniform thin film semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Akiharu Miyanaga, Toru Mitsuki, Hisashi Ohtani
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Abstract
A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influence of the concave part is removed by conducting a flattening treatment and heat treatment of the undercoat film of the semiconductor thin film.
Claims52
A display device having at least one thin film transistor, comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein an average value of a depth of the concave part of the insulating film (d) and an average value of a depth of the concave part of the substrate (D) satisfy d/D<1.
3 more elements
A display device having at least one thin film transistor, comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein the concave part of the insulating film has an opening diameter r of from 10 nm to 1 μm.
3 more elements
A display device having at least one thin film transistor, comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein an angle a formed by a tangent line at an opening of said concave part of said surface of insulating film and a major plane of the substrate is from 0° to 60°.
3 more elements
A display device comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein a radius of curvature around an opening of said concave part of said insulating surface layer R1 is larger than a radius of curvature of an opening of said concave part of said substrate R2.
3 more elements
A display device comprising:
- a substrate;
- an insulating film formed on the upper surface of the substrate;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein a square root of mean square of surface roughness Rms of the insulating film is 0.3 nm or less.
3 more elements
An electronic device having at least one thin film transistor, comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein an average value of a depth of the concave part of the insulating film (d) and an average value of a depth of the concave part of the substrate (D) satisfy d/D<1.
3 more elements
A display device having at least one thin film transistor, comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein the concave part of the insulating film has an opening diameter r of from 10 nm to 1 μm.
3 more elements
A display device having at least one thin film transistor, comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein an angle a formed by a tangent line at an opening of said concave part of said surface of insulating film and a major plane of the substrate is from 0° to 60°.
3 more elements
A display device comprising:
- a substrate, an upper surface of which has at least one concave part;
- an insulating film formed on the upper surface of the substrate, an upper surface of the insulating film having at least one concave part;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein a radius of curvature around an opening of said concave part of said insulating surface layer R1 is larger than a radius of curvature of an opening of said concave part of said substrate R2.
3 more elements
A display device comprising:
- a substrate;
- an insulating film formed on the upper surface of the substrate;
- a crystalline semiconductor film comprising silicon formed on the upper surface of the insulating film;
- and
- a channel formation region formed in said crystalline semiconductor film,
- wherein a square root of mean square of surface roughness Rms of the insulating film is 0.3 nm or less.
3 more elements
Dependencies are inferred from the claim text.