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US 6,635,926 B2Granted
Field effect transistor with high withstand voltage and low resistance
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorsNobuki Miyakoshi, Toshiki Matsubara, Hideyuki Nakamura
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Abstract
A field effect transistor with a high withstand voltage and a low resistance is provided. A ring-shaped channel region is disposed inside a source region formed in a ring, and the inside of the channel region is taken as a drain region. A depletion layer extends toward the inside of the drain region, resulting in a high withstand voltage. In the portion, except the portion within a prescribed distance from the corner portion of the channel region, a low resistance conductive layer is disposed, thereby resulting in high withstand voltage.
Claims7
A field effect transistor, comprising:
- a main diffused region of a second conductivity type formed within a high resistance layer of a first conductivity type, and disposed on the surface side of the high resistance layer;
- a source region of the first conductivity type formed within the main diffused region, and disposed on the surface thereof;
- a ring-shaped channel region being formed in a ring, being a part of the main diffused region, and located between the edge of the main diffused region and the edge of the source region;
- a drain region surrounded by the ring-shaped channel region;
- a gate insulation film disposed at least on the channel region surface;
- and
- a gate electrode film disposed on the gate insulation film surface,
- the source region being located at an outer periphery of the ring-shaped channel region,
- the source region and the high resistance region being electrically connected with each other upon inversion of the channel region surface into the first conductivity type due to a voltage applied to the gate electrode film,
- wherein the drain region surrounded by the ring-shaped channel region has at least one narrow elongate body portion, and a plurality of branch portions with their respective one ends connected to the body portion, and the ring-shaped channel region is disposed so as to surround the periphery of the body portion and the branch portions,
- wherein the body portion located between the branch portions extends roundly toward the inside of the body portion itself,
- wherein the main diffused region comprises a P-type base region and a P-type ohmic region having a deeper diffusion depth than that of the base region, a conductive layer of the first conductivity type with a lower resistance than that of the high resistance layer is disposed in the vicinity of the surface inside of the drain region, a pn junction is formed with the ohmic region and the conductive region at least on the surface of the tip portion of the portion extending roundly toward the inside of the body portion.
9 more elements
A field effect transistor, comprising:
- a main diffused region of a second conductivity type formed within a high resistance layer of a first conductivity type, and disposed on the surface side of the high resistance layer;
- a source region of the first conductivity type formed within the main diffused region, and disposed on the surface thereof;
- a ring-shaped channel region being formed in a ring, being a part of the main diffused region, and located between the edge of the main diffused region and the edge of the source region;
- a drain region surrounded by the ring-shaped channel region;
- a gate insulation film disposed at least on the channel region surface;
- and
- a gate electrode film disposed on the gate insulation film surface,
- the source region being located at an outer periphery of the ring-shaped channel region,
- the source region and the high resistance region being electrically connected with each other upon inversion of the channel region surface into the first conductivity type due to a voltage applied to the gate electrode film,
- wherein the drain region surrounded by the ring-shaped channel region has at least one narrow elongate body portion, and a plurality of branch portions with their respective one ends connected to the body portion, and the ring-shaped channel region is disposed so as to surround the periphery of the body portion and the branch portions,
- wherein a floating potential region of the second conductivity type not in contact with the channel region is disposed on the surface side of the inside of the drain region.
8 more elements
A field effect transistor, comprising:
- a main diffused region of a second conductivity type formed within a high resistance layer of a first conductivity type, and disposed on the surface side of the high resistance layer;
- a source region of the first conductivity type formed within the main diffused region, and disposed on the surface thereof;
- a ring-shaped channel region being formed in a ring, being a part of the main diffused region, and located between the edge of the main diffused region and the edge of the source region;
- a drain region surrounded the ring-shaped channel region;
- a gate insulation film disposed at least on the channel region surface;
- and
- a gate electrode film disposed on the gate insulation film surface,
- the source region being located at an outer periphery of the ring-shaped channel region,
- the source region and the high resistance region being electrically connected with each other upon inversion of the channel region surface into the first conductivity type due to a voltage applied to the gate electrode film,
- wherein an anode electrode film for forming a Schottky junction with the high resistance layer is disposed on the back side of the high resistance layer, such that a diode in which the anode electrode film is taken as an anode, and the high resistance layer is taken as a cathode is formed.
7 more elements
Dependencies are inferred from the claim text.