Semiconductor storage device
AssigneeHitachi, Ltd.
InventorsHiroshi Miki, Keiko Kushida, Yasuhiro Shimamoto, Shinichiro Takatani, Yoshihisa Fujisaki, Hiromi Nakai
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Abstract
The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively act as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.
Claims4
A semiconductor storage device comprising:
- a capacitor having a first electrode, a high dielectric constant or ferroelectric film which is provided in contact with the first electrode, and a second electrode provided in contact with the high dielectric constant or ferroelectric film;
- a hydrogen diffusion preventing layer provided on the capacitor part;
- and
- a hydrogen adsorption inhibiting layer provided on the hydrogen diffusion preventing layer,
- wherein the hydrogen adsorption inhibiting layer is comprised of any one of silver, aluminum, lead, bismuth, gold, zinc, cadmium, indium, germanium and tin.
Dependencies are inferred from the claim text.