CMOS image sensor and manufacturing method thereof
AssigneeNEC Electronics Corporation
InventorHiroaki Ohkubo
Life of this patent
Estimating the term…
Abstract
A CMOS image sensor and a manufacturing method thereof are disclosed, by which the sensitivity characteristics of the photodiode and the operation characteristics of the MOS transistor are improved and easy and low-cost manufacturing is realized. The CMOS image sensor comprises a photodiode having a light reception surface covered by a multi-layered antireflection film which is formed by alternately depositing two or more kinds of insulating films whose refractive indexes are different; and at least one MOS transistor having diffusion layers which respectively function as source and drain areas, wherein a silicide layer is formed on each diffusion layer. The photodiode and the MOS transistor are provided on a common substrate and are electrically connected with each other.
Claims3
A CMOS image sensor comprising:
- a photodiode having a light reception surface covered by a multi-layered antireflection film that includes an insulating nitride film sandwiched between and directly contacting two insulating oxide films, the two insulating oxide films having a same first index of refraction different from the first index of refraction;
- and
- at least one MOS transistor having diffusion layers which respectively function as source and drain areas, wherein a silicide layer is formed on each diffusion layer,
- wherein the photodiode and said at least one MOS transistor are provided on a common substrate and are electrically connected with each other, and
- wherein said multi-layered antireflection film covers only the light reception surface and a peripheral area of said photodiode and does not cover said at least one MOS transistor.
Dependencies are inferred from the claim text.