Solid state image sensing device
AssigneeSony Corporation
InventorYasushi Maruyama
Life of this patent
Estimating the term…
Abstract
A solid state image sensing device and method of making same. The device includes a sensor portion, a vertical transfer register having a transfer electrode, a shunt interconnection of a refractory metal, and a light shielding film is provided. The shunt interconnection and the light shielding film are insulated from one another with an oxide film, an insulating film to serve as a stopper film at the time of pattering the oxide film is formed under the oxide film and the shunt interconnection, and the oxide film and the insulating film are not provided under the projecting portion of the light shielding film.
Claims4
A solid state image sensing device, comprising:
- sensor portions arranged in a matrix;
- a vertical transfer register having a transfer electrode;
- a shunt interconnection of a refractory metal connected to said transfer electrode;
- and
- a light shielding film covering said transfer electrode,
- said shunt interconnection and said light shielding film being insulated from one another with an oxide film,
- an insulating film to serve as a stopper film at the time of pattering said oxide film being provided under said oxide film and said shunt interconnection,
- said oxide film and said insulating film to serve as a stopper film being absent under portions of said light shielding film which are not located directly above the transfer electrode.
A solid state imaging device comprising:
- a vertical transfer register having a transfer electrode and a shunt interconnection;
- a light shielding film covering said transfer electrode, said shunt interconnection and said light shielding film being insulated from one another with an oxide film,
- an insulating film to serve as a stopper film at the time of pattering said oxide film being provided under said oxide film and said shunt interconnection,
- said oxide film and said insulating film to serve as a stopper film being absent under portions of said light shielding film which are not located directly above the transfer electrode.
Dependencies are inferred from the claim text.