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AssigneesNobuhiko Sawaki, Sharp Kabushiki Kaisha
InventorsNobuhiko Sawaki, Yoshio Honda, Norikatsu Koide, Katsuki Furukawa
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A semiconductor device includes a silicon substrate and a compound semiconductor layer formed on a main plane of the silicon substrate. The compound semiconductor layer is represented by the general formula of InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). The silicon substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the silicon substrate, or a plane inclined in a range within 3 degrees in an arbitrary direction from the inclined plane. The compound semiconductor layer is formed on the slope. The semiconductor device includes compound semiconductor layers represented by AlxGayInzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) on a silicon substrate. The silicon substrate has a main plane constituted by a plane in a range of ±5 degrees in an arbitrary direction from a (112) plane. The compound semiconductor layers are formed on the main plane.
A semiconductor device comprising a silicon substrate and a compound semiconductor layer formed on a main plane of said silicon substrate and represented by a general formula of InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1), wherein said silicon substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of said silicon substrate or a plane inclined at a range within 3 degrees in an arbitrary direction from the inclined plane, said compound semiconductor layer formed on said slope.
A semiconductor device comprising a compound semiconductor layer represented by a general formula of InxGayAlzN (where x+y+z=1, 0≦x≦1, 0y≦1, 0≦z≦1), wherein said compound semiconductor layer is formed using a silicon substrate having a main plane constituted by a plane corresponding to a (100) plane rotated 7.3 degrees about a [01-1] axis, or a plane in a range inclined within 3 degrees from the rotated plane in an arbitrary direction, said silicon substrate including a trench having a (111) plane as a slope, and said compound semiconductor layer formed on said slope, wherein the plane in a range inclined within 3 degrees from the rotated plane in an arbitrary direction is different from the (100) plane and the (111) plane.
A semiconductor device having a compound semiconductor layer represented by AlxGayInzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0z≦1), on a silicon substrate,
A semiconductor device comprising:
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