Semiconductor film having a single-crystal like region with no grain boundary
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Akiharu Miyanaga
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Abstract
In producing a thin film transistor (TFT), an silicon oxide film is formed as an under film on a glass substrate, and then an amorphous silicon film is formed therein. A metal element which promotes crystallization of silicon is disposed in contact with a surface of the amorphous silicon film. A thermal processing for the amorphous silicon film is performed at a crystallization temperature of the amorphous silicon film or higher. At the thermal processing, a glass substrate is placed on an object having constant flatness. Cooling is performed to obtain a crystalline silicon film wherein the substrate is not distorted and deformed.
Claims23
A semiconductor device comprising:
- a semiconductor film comprising silicon on an insulating surface;
- wherein said semiconductor film includes a substantially single-crystal like region where no grain boundary substantially exists with a spin density of 3×1017 cm−3 or less.
A semiconductor device comprising:
- a semiconductor film comprising silicon on an insulating surface;
- wherein said semiconductor film includes a substantially single-crystal like region where no grain boundary substantially exists with hydrogen concentration of from 1×1015 cm−3 to 5 atoms %.
A semiconductor device comprising:
- a semiconductor film comprising silicon on an insulating surface;
- wherein said semiconductor film includes a substantially single-crystal like region where no grain boundary substantially exists;
- and
- wherein said semiconductor device has a S value of 0.12 V/Dec or less.
A semiconductor device comprising:
- a semiconductor film comprising silicon on an insulating surface;
- wherein said semiconductor film includes a substantially single-crystal like region where no grain boundary substantially exists;
- and
- wherein said semiconductor film has a thickness of 100 Å or more.
A semiconductor device comprising:
- a semiconductor film comprising silicon on an insulating surface,
- wherein said semiconductor film includes a substantially single-crystal like region where no grain boundary substantially exists,
- wherein lumps of nickel element in the semiconductor film are observable by TEM, said nickel elements promoting crystallization of said semiconductor,
- wherein each of the lump of nickel element has a size in a range of several tens angstroms or less.
Dependencies are inferred from the claim text.