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AssigneeSumitomo Eaton Nova Corporation
InventorsMitsukuni Tsukihara, Mitsuaki Kabasawa, Yuji Takahashi, Michiro Sugitani
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An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.
An ion implantation apparatus comprising an ion source for generating ions, an extraction electrode for extracting ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode, the ions that have passed through the mass analysis magnet being implanted into a target,
A tuning method of an ion source system for use in an ion implantation method comprising the steps of generating ions by an ion source, extracting the ions from the ion source by the action of an extraction electric field of an extraction electrode assembly including a plurality of electrodes, deflecting the trajectory of an extracted ion beam by a mass analysis magnet, and implanting the ions that have passed through the mass analysis magnet into a target, wherein:
Dependencies are inferred from the claim text.