Loading patent…
AssigneeNikon Corporation
InventorsAtsushi Yamada, Hiroyasu Simizu, Koichi Kamijo
Estimating the term…
Charged-particle-beam (CPB) optical systems (especially projection-lens systems for use in CPB microlithography apparatus) are disclosed that exhibit excellent control of geometric aberration and the Coulomb effect while exhibiting low combined aberration and blur. As the column length of the projection-lens system is increased, geometric aberration is reduced but the Coulomb effect increases, which degrades overall optical characteristics. Conversely, as the column length is decreased, the Coulomb effect is reduced but geometric aberration increases, which degrades overall optical characteristics. Hence, the projection-lens system, exhibiting a magnification of 1/M and having a column length (distance in mm between reticle and wafer) of 250×M0.63±10% (wherein 0<M; e.g., 0<M<4 or 4<M) exhibits blur and geometric distortion of about 70 nm or less and about 4 nm or less, respectively.
In a charged-particle-beam (CPB) microlithography apparatus that directs a shaped charged particle beam onto a reticle to illuminate a selected region on the reticle and that directs the beam from the reticle to a substrate to form an image of the illuminated region of the reticle on the substrate, a projection-lens system situated between the reticle and the substrate and configured to direct the beam from the reticle to the substrate at a demagnfication ratio of 1/M (0<M), the projection-lens system having an optimum column length in mm from the reticle to the substrate of 250×M0.63±10%, where M is the magnification factor.
Dependencies are inferred from the claim text.