High transmission, low energy beamline architecture for ion implanter
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorAnthony Renau
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AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorAnthony Renau
Estimating the term…
An ion beam apparatus includes an ion source, a first magnet assembly, a structure defining a resolving aperture and a second magnet assembly. The ion source has an elongated extraction aperture for generating a ribbon ion beam. The first magnet assembly provides first magnetic fields for deflecting the ribbon ion beam perpendicular to the long dimension of the ribbon ion beam cross section, wherein different ion species in the ribbon ion beam are separated. The resolving aperture selects an ion species from the separated ion beam. The second magnet assembly provides second magnetic fields for deflecting ions of the selected ion species in the ribbon ion beam parallel to the long dimension of the ribbon ion beam cross section to produce desired ion trajectories. The width of the ribbon ion beam increases through most of the beamline. As a result, low energy performance is enhanced.
Ion beam apparatus comprising:
A method for producing an ion beam, comprising the steps of:
Ion beam apparatus comprising:
Ion beam apparatus comprising:
Dependencies are inferred from the claim text.