Radiation detector
AssigneeShimadzu Corporation
InventorsKenji Sato, Toshinori Yoshimuta, Satoshi Tokuda
Life of this patent
Estimating the term…
Abstract
A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.
Claims12
A radiation detector comprising:
- an insulating substrate having a charge storage capacitor and a charge reading switching element which are formed thereon;
- a carrier collection electrode formed on said insulating substrate and electrically connected to said charge storage capacitor;
- a radiation sensitive type amorphous semiconductor thick film formed on said carrier collection electrode and adapted to generate charge transfer media in response to an incidence of a radiation;
- a voltage application electrode formed on said amorphous semiconductor thick film;
- a solvent-resistant and carrier-selective high-resistance film formed between said amorphous semiconductor thick film and said voltage application electrode in such a manner as to cover the entire surface of said amorphous semiconductor thick film;
- and
- an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of said insulating substrate, and being formed on said voltage application electrode and fixed thereto by a high-withstand-voltage hardening synthetic resin in such a way as to prevent warpage of said amorphous semiconductor thick film from occurring owing to change in temperature,
- wherein electric charges are stored in said charge storage capacitor according to the number of the charge transfer media generated in said amorphous semiconductor thick film by the incidence of radiation and the electric charges stored in said charge storage capacitor is read as a radiation detection signal through said switching element.
Dependencies are inferred from the claim text.