Semiconductor analysis arrangement and method therefor

A semiconductor die analysis system comprising:

• a test chamber;
• a docking arrangement adapted to dock with the test chamber and hold a semiconductor die in the test chamber when docked therewith;
• a plurality of perturbation devices adapted to perturb the die and including a laser,
• a fiber optic cable adapted to direct light from the laser to the die, and
• at least one light detection arrangement adapted to detect a condition of light leakage from the cable and to generate a signal representing the detected leakage condition,
• wherein the controller is adapted to deactivate the laser in response to the detected leakage reaching a threshold level;
• a data acquisition arrangement adapted to acquire a response from the die to the perturbation;
• and
• a controller adapted to control thee perturbation of the die.

A semiconductor die analysis system comprising:

• a test chamber;
• a docking arrangement adapted to dock with the test chamber and hold a semiconductor die in the test chamber when docked therewith;
• a plurality of perturbation devices adapted to perturb the die;
• a data acquisition arrangement adapted to acquire a response from the die to the perturbation;
• a controller adapted to control the perturbation of the die;
• and
• a coupling arrangement adapted to couple the docking arrangement to the test chamber.

A semiconductor die analysis system comprising:

• a test chamber;
• a docking arrangement adapted to dock with the test chamber and hold a semiconductor die in the test chamber when docked therewith;
• a plurality of perturbation devices adapted to perturb the die;
• a data acquisition arrangement adapted to acquire a response from the die to the perturbation;
• a controller adapted to control the perturbation of the die;
• and wherein the perturbation devices include an electron beam device having a control board that is coupled to the host controller board, the host controller board being adapted to communicate control information to the control board for controlling the electron beam device.

A semiconductor die analysis system comprising:

• a test chamber;
• a docking arrangement adapted to dock with the test chamber and hold a semiconductor die in the test chamber when docked therewith;
• a plurality of perturbation devices adapted to perturb the die, wherein the perturbation devices include an ion beam device having a control board, and wherein the control board is coupled to the host controller board, the host controller board being adapted to communicate control information to the control board for controlling the ion beam device;
• a data acquisition arrangement adapted to acquire a response from the die to the perturbation;
• a controller adapted to control the perturbation of the die;
• and a host controller board coupled to each of the plurality of perturbation devices and adapted to control the perturbation devices.

A semiconductor die analysis system comprising:

• a test chamber;
• a docking arrangement adapted to dock with the test chamber and hold a semiconductor die in the test chamber when docked therewith;
• a plurality of perturbation devices adapted to perturb the die;
• a data acquisition arrangement adapted to acquire a response from the die to the perturbation and adapted to include at least one of:
• a laser scanning microscope (LSM), emission microscopy camera, optical image camera, OBIC defection arrangement, ion detector and an electron detector;
• a controller adapted to control the perturbation of the die;
• and
• a host controller board coupled to each of the plurality of perturbation devices and to the data acquisition arrangement, and wherein the host controller board is adapted to control the perturbation devices and to receive data representing a response of the die and to provide an indication of the response to a user via a user interface.

A semiconductor die analysis system comprising:

• chamber means for testing a semiconductor die;
• means for docking with the chamber means and for holding the semiconductor die in the chamber means when docked therewith;
• means for perturbing the die;
• means for acquiring a response to the perturbation from the die;
• means for controlling the perturbation of the die;
• and
• means for positioning the die relative to at least one of:
• the data acquisition arrangement, and the means for perturbing the die.

A method for analyzing a semiconductor die, the method comprising:

• providing a test chamber for testing a semiconductor die;
• holding the semiconductor die in the test chamber with a docking arrangement adapted to dock with the test chamber;
• perturbing the die with a perturbation device;
• acquiring a response to the perturbation from the die;
• and
• controlling the perturbation of the die and positioning the die relative to at least one of:
• a reference point for the data acquisition, and the perturbation device.