Methods of heat treatment and heat treatment apparatus for silicon oxide films

A method of forming a semiconductor device comprising:

• forming a gate insulating film comprising silicon oxide adjacent to a semiconductor by using TEOS as a starting material;
• and
• irradiating an ultraviolet light onto said gate insulating film comprising silicon oxide in an atmosphere comprising N2O while heating said gate insulating film comprising silicon oxide to a temperature of 600° C. or lower.

A method of forming a semiconductor device comprising:

• forming an insulating film comprising silicon oxide by using TEOS as a starting material;
• and
• irradiating an ultraviolet light onto said insulating film comprising silicon oxide in an atmosphere comprising N2O while heating said insulating film comprising silicon oxide to a temperature of 600° C. or lower.

A method of forming a semiconductor device comprising:

• forming an insulating film comprising silicon oxide by using a silicon source containing carbon;
• and
• irradiating an ultraviolet light onto said insulating film comprising silicon oxide in an atmosphere comprising N2O while heating said insulating film comprising silicon oxide to a temperature of 300° C. or higher.

A method of forming a semiconductor device comprising:

• forming a gate insulating film comprising silicon oxide adjacent to a semiconductor by using TEOS as a starting material;
• and
• irradiating an ultraviolet light onto said gate insulating film comprising silicon oxide in an atmosphere comprising N2O while heating said gate insulating film comprising silicon oxide to a temperature of 300° C. or higher.

A method of forming a semiconductor device comprising:

• forming an insulating film comprising silicon oxide adjacent to a semiconductor by using a silicon source containing carbon;
• and
• irradiating an ultraviolet light onto said insulating film comprising silicon oxide in an atmosphere comprising N2O while heating said insulating film comprising silicon oxide to a temperature of 600° C. or lower.