Method for forming patterned polyimide layer

Abstract

Within a method for forming a patterned polyimide layer, there is first provided a substrate. There is then formed over the substrate a blanket polyamic acid layer. There is then formed upon the blanket polyamic acid layer a patterned photoresist layer. There is then hardened the patterned photoresist layer to form a hardened patterned photoresist layer. There is then patterned, while employing the hardened patterned photoresist layer as an etch mask layer, the blanket polyamic acid layer to form a patterned polyamic acid layer. Finally, there is then thermally annealed the patterned polyamic acid layer to form a patterned polyimide layer. By employing as an etch mask when forming from the blanket polyamic acid layers the patterned polyamic acid layer the hardened patterned photoresist layer, rather than an unhardened patterned photoresist layer, the patterned polyamic acid layer, and consequently also the patterned polyimide layer, are formed with enhanced dimensional control.

Dependencies are inferred from the claim text.