Method of substrate silicon removal for integrated circuit devices
AssigneeAdvanced Micro Devices, Inc.
InventorsRama R. Goruganthu, Richard W. Johnson, Rosalinda M. Ring
Life of this patent
Estimating the term…
Loading patent…
AssigneeAdvanced Micro Devices, Inc.
InventorsRama R. Goruganthu, Richard W. Johnson, Rosalinda M. Ring
Estimating the term…
An integrated circuit die coupled to a package substrate and having circuitry in a circuit side opposite a back side is etched in a manner that inhibits the erosion of underfill material that is used around the periphery of the die and between the die and the package substrate. According to an example embodiment of the present invention, a protective coating adapted to resist etch chemicals is formed over the underfill material. The die is then etched using an etch chemistry that, absent the protective coating, would erode the underfill material. In this manner, etch chemistries that would harm the die, or even be unusable can be used to etch the die. In addition, problems associated with the underfill being eroded, such as die chipping, can be avoided.
A method for etching an IC die coupled to a package substrate and having an underfill material adjacent to the package and to the periphery of the die, the method comprising:
A method for analyzing a flip chip packaged die having silicon on insulator (SOI) structure and having an underfill material around the die periphery, the die having a circuit side and a back side, the circuit side facing and coupled to the package substrate, the method comprising:
Dependencies are inferred from the claim text.