Method of making metallization and contact structures in an integrated circuit

A method for forming metallization and contact structures in an integrated circuit comprising in sequential order:

• a) etching a trench dielectric layer of a composite structure comprising in sequential order:
• i) a semiconductor substrate comprising an active region, a gate structure thereover, and dielectric spacers adjacent to said gate structure;
• ii) a substantially planar contact dielectric layer;
• iii) a trench dielectric layer;
• and
• iv) a patterned photoresist;
• to form a trench in said trench dielectric layer under etch conditions which do not substantially etch said substantially planar contact dielectric layer;
• a′) removing said patterned photoresist;
• a″) forming a contact opening mask;
• b) etching said substantially planar contact dielectric layer under conditions which do not substantially damage said gate structure to form a first contact opening that exposes a region of said semiconductor substrate and a portion of at least one of said dielectric spacers;
• and
• c) depositing a conductive material into said first contact opening and said trench forming a contact structure in said first contact opening and a metallization in said trench.