US 6,635,565 B2 · Method of cleaning a dual damascene structure

Abstract

A method of cleaning a dual damascene structure includes forming a first conductive layer in a substrate. A dielectric layer is formed over the substrate. A dual damascene opening is formed in the dielectric layer to expose the first conductive layer. A H2O2 based aqueous solution is used to remove polymer residues in the dual damascene opening. A temperature of the H2O2 based aqueous solution is controlled so that the first conductive layer is not corroded. A diluted HF solution or a diluted HF and HCl solution is used to remove the polymer residues. A second conductive layer is formed over the substrate to fill the dual damascene opening. A chemical mechanical polishing process is performed with the dielectric layer serving as a polishing stop to remove the second conductive layer outside the dual damascene opening. A H2O2 based aqueous solution is used to clean the hydrocarbon particulates from the chemical mechanically polishing step. A diluted HF solution or a diluted HF and HCl solution is used to remove the slurry residues, such as silicon oxide of the slurry, from the chemical mechanical polishing step.

Claims15

Dependent claims

A method of cleaning a dual damascene structure, comprising:

providing a substrate, wherein a first conductive layer is formed in a substrate;
forming a dielectric layer over the substrate;
forming a dual damascene opening in the dielectric layer to expose the first conductive layer, after which a polymer residue remains in the dual damascene opening;
using a H2O2 based aqueous solution to oxidize the polymer residues in the dual damascene opening, wherein a temperature of the H2O2 based aqueous solution is in a in a range of about 30° C. to about 40° C. so that the first conductive layer is not corroded;
cleaning the dual damascene opening with a diluted HF solution or a diluted HF and HCl solution;
forming a second conductive layer over the substrate to fill the dual damascene opening;
performing a chemical mechanical polishing process to remove the second conductive layer outside the dual damascene opening, wherein a dual damascene structure is formed;
using a H2O2 based aqueous solution to clean the dual damascene structure and controlling a temperature of a H2O2 based aqueous solution so that the dual damascene structure is not overly corroded;
and
cleaning the dual damascene structure with a diluted HF solution or a diluted HF and HCl solution.

7 more elements

Dependencies are inferred from the claim text.

Method of cleaning a dual damascene structure

Life of this patent

Method of cleaning a dual damascene structure

Life of this patent

Abstract

Claims15