US 6,635,554 B1 · Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures

Abstract

System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating fluence of the excimer laser pulses, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a mask for masking portions of the homoginized modulated laser pulses into patterned beamlets, a sample stage for receiving the patterned beamlets to effect melting of portions of any amorphous silicon thin film sample placed thereon corresponding to the beamlets, translating means for controllably translating a relative position of the sample stage with respect to a position of the mask and a computer for controlling the controllable fluence modulation of the excimer laser pulses and the controllable relative positions of the sample stage and mask, and for coordinating excimer pulse generation and fluence modulation with the relative positions of the sample stage and mask, to thereby process amorphous silicon thin film sample into a single or polycrystalline silicon thin film by sequential translation of the sample stage relative to the mask and irradiation of the sample by patterned beamlets of varying fluence at corresponding sequential locations thereon.

Claims21

Dependent claims

A method for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film, comprising the steps of:

(a) generating a sequence of excimer laser pulses;
(b) controllably modulating each excimer laser pulse in said sequence to a predetermined fluence;
(c) homogenizing each modulated laser pulse in said sequence in a predetermined plane;
(d) masking portions of each homogenized fluence controlled laser pulse in said sequence to generate a sequence of fluence controlled pulses of patterned beamlets;
(e) irradiating said amorphous silicon thin film sample with said sequence of fluence controlled patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in said sequence of pulses of patterned beamlets;
and
(f) controllably sequentially translating said sample relative to each of said fluence controlled pulse of patterned beamlets to thereby process said amorphous silicon thin film sample into said single or polycrystalline silicon thin film,
wherein said relative translation of said sample is performed based on a coordination of said generation of said excimer laser pulses and said fluence modulation with a relative position of said sample with respect to said sequence of pulses.

5 more elements

Dependencies are inferred from the claim text.

Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures

Life of this patent

Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures

Life of this patent

Abstract

Claims21