Method of producing exposure mask
AssigneeKabushiki Kaisha Toshiba
InventorsSuigen Kyoh, Iwao Higashikawa
Life of this patent
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Abstract
A method of producing an exposure mask by carrying out at least two times of exposure on a mask substrate, wherein at a first time of pattern exposure, alignment marks to be reference for positioning at a second time of exposure are exposed onto a position on the mask substrate with positional error by substrate deformation obtained in advance with an exposure apparatus to be used corrected, and at a second time of pattern exposure, positional error by substrate deformation obtained in advance with the exposure apparatus to be used is corrected and thereby the position of the alignment marks are detected, and on the basis of the detected position of the alignment marks, the positions between exposure patterns are aligned.
Claims14
A method of producing an exposure mask by carrying out patterning with at least two times of exposure on a mask substrate, comprising:
- performing a first time exposure of a first pattern and an alignment mark which is used as a reference for positioning at a second time exposure of a second pattern, the alignment mark being exposed onto a corrected position on the mask substrate with positional error by substrate deformation obtained in advance with a first exposure apparatus corrected;
- and
- performing a second time exposure of the second pattern, by detecting a position of the alignment mark with a positional error caused by a substrate deformation obtained in advance in a second exposure apparatus to be used corrected, so as to determine the position of the second pattern with respect to the first pattern according to the detected position of the alignment mark.
A method of producing an exposure mask by carrying out patterning with at least two times of exposure on a mask substrate, comprising:
- performing, using a first exposure apparatus, a first time exposure of a first pattern and an alignment mark which is used as a reference for positioning at a second time exposure of a second pattern, the alignment mark being exposed onto a corrected position on the mask substrate with positional error by substrate deformation obtained in advance with the first exposure apparatus corrected;
- and
- performing, using a second exposure apparatus, a second time exposure of the second pattern, by detecting a position of the alignment mark with a positional error caused by a substrate deformation obtained in advance in a second exposure apparatus to be used corrected, so as to determine the position of the second pattern with respect to the first pattern according to the detected position of the alignment mark.
A method of manufacturing a semiconductor device by using an exposure mask which is produced by carrying out patterning with at least two times of exposure on a mask substrate, comprising:
- preparing the exposure mask produced by performing a first time exposure of a first pattern and an alignment mark which is used as a reference for positioning at a second time exposure of a second pattern, the alignment mark being exposed onto a corrected position on the mask substrate with positional error by substrate deformation obtained in advance with a first exposure apparatus corrected;
- performing a second time exposure of the second pattern, by detecting a position of the alignment mark with a positional error caused by a substrate deformation obtained in advance in a second exposure apparatus to be used corrected, so as to determine the position of the second pattern with respect to the first pattern according to the detected position of the alignment mark;
- and
- exposing a semiconductor wafer by using the prepared exposure mask.
Dependencies are inferred from the claim text.