Method for fabricating capacitor of semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorsKyong-Min Kim, Ki-Seon Park
Life of this patent
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Abstract
A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride layer on the nitride layer by performing a nitrogen plasma treatment; depositing a first TiN layer for a top electrode on the dielectric layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.
Claims23
A method of forming capacitor of semiconductor device, comprising the steps of:
- forming a lower electrode on a semiconductor substrate;
- forming a dielectric layer containing a Ta element on the lower electrode;
- forming a nitride layer on the dielectric layer by performing a nitrogen plasma treatment;
- depositing a first TiN layer for a top electrode on the nitride layer by using a plasma enhanced chemical vapor deposition (PECVD) method;
- and
- depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.
A method of forming capacitor of semiconductor device, comprising the steps of:
- forming a lower electrode on a semiconductor substrate;
- forming a dielectric layer containing a Ta element on the lower electrode;
- forming a nitride layer on the dielectric layer;
- depositing a first TiN layer for a top electrode on the dielectric layer;
- and
- depositing a second TiN layer for the top electrode on the first TiN layer.
Dependencies are inferred from the claim text.