Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film made of silicon or silicon compound, the semiconductor film including a conductivity type impurity whose concentration is greater than 5×1020 atoms/cm3 and less than 1×1022 atoms/cm3, the semiconductor film being electrically connected to a semiconductor substrate;
• forming the refractory metal film selectively on a surface of the semiconductor film in an atmosphere which is not introducing a reduction gas and introducing a refractory metal halogenated gas into the atmosphere;
• forming a refractory metal nitride film on the refractory metal film;
• forming a dielectric oxide film of group 4A elements or group 5A elements on the refractory metal nitride film;
• and
• crystallizing the dielectric oxide film by virtue of heat treatment at 500° C. or more.

A method manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film on or above a semiconductor substrate, said semiconductor film including a conductivity type impurity whose concentration is greater than 5×1020 atoms/cm3 and less than 1×1022 atoms/cm3;
• forming the refractory metal film on the semiconductor film in an atmosphere which is not introducing a reduction gas and introducing a refractory metal halogenated gas into the atmosphere;
• forming a refractory metal nitride film on the refractory metal film;
• forming a ruthenium metal film on the refractory metal nitride film;
• forming an oxygen compound film on the ruthenium metal film;
• and
• annealing the oxygen compound film in an oxygen containing gas.