Use of disposable spacer to introduce gettering in SOI layer

A method of fabricating a silicon-on-insulator (501) device, said method comprising the steps of:

• (a) forming a disposable spacer on each vertical sidewall of a patterned gate stack region, said patterned gate stack region being located on a top Si-containing layer of an SOI substrate;
• (b) forming gettering regions self-aligned with active regions and gettering into non-active device areas of said top Si-containing layer by implanting without a mask gettering species into said top Si-containing layer that are not protected by said disposable spacer and said patterned gate stack region using an implant dose of about 1E15 cm−2 or greater, said maskless implant forming gettering regions that are symmetrical with respect to the gate stack region;
• and
• (c) removing said disposable spacer and annealing the implanted gettering species.

A method of forming a self-aligned gettering region within an SOI substrate, said method comprising the steps of:

• (a) forming a disposable spacer on each vertical sidewall of a patterned gate stack region, said patterned gate stack region being located on a top Si-containing layer of an SOI substrate;
• (b) implanting gettering species into said top Si-containing layer not protected by said disposable spacer and said patterned gate stack region, wherein said implanting is performed in the absence of a lithographic masking layer;
• and
• (c) removing said disposable spacer and annealing the implanted gettering species so as to convert said gettering species into a gettering region that is self-aligned with active regions.