Method of producing a semiconductor device by dividing a semiconductor wafer into separate pieces of semiconductor chips

A method of producing a semiconductor device by dividing a semiconductor wafer into separate pieces of semiconductor chips, the method comprising:

• (a) a groove formation process for forming a groove with a pattern according to an outer contour of a semiconductor chip in a front surface of a semiconductor wafer;
• (b) a process following the groove forming process for holding the semiconductor wafer by a wafer holding mechanism;
• (c) a back surface grinding process for grinding, with a grinder, a back surface of the semiconductor wafer held by the wafer holding mechanism;
• and
• (d) a finish timing determining process for detecting opening of a bottom face of the groove during the back surface grinding process and determining timing for finishing the back surface grinding process based on a result of the detection,
• wherein the finish timing determining process includes a process for detecting an electromagnetic wave passing through the groove during the back surface grinding process.

A method of producing a semiconductor device by dividing a semiconductor wafer into separate pieces of semiconductor chips, the method comprising:

• (a) a groove formation process for forming a groove with a pattern according to an outer contour of a semiconductor chip in a front surface of a semiconductor wafer;
• (b) a process following the groove forming process for holding the semiconductor wafer by a wafer holding mechanism;
• (c) a back surface grinding process for grinding, with a grinder, a back surface of the semiconductor wafer held by the wafer holding mechanism;
• and
• (d) a finish timing determining process for detecting opening of a bottom face of the groove during the back surface grinding process and determining timing for finishing the back surface grinding process based on a result of the detection,
• wherein the finish timing determining process includes a process for detecting an electromagnetic wave passing through the groove during the back surface grinding process and the electromagnetic wave includes microwave.

A method of producing a semiconductor device by dividing a semiconductor wafer into separate pieces of semiconductor chips, the method comprising:

• (a) a groove formation process for forming a groove with a pattern according to an outer contour of a semiconductor chip in a front surface of a semiconductor wafer;
• (b) a process following the groove forming process for holding the semiconductor wafer by a wafer holding mechanism;
• (c) a back surface grinding process for grinding, with a grinder, a back surface of the semiconductor wafer held by the wafer holding mechanism;
• and,
• (d) a finish timing determining process for detecting opening of a bottom face of the groove during the back surface grinding process and determining timing for finishing the back surface grinding process based on a result of the detection,
• wherein the finish timing determining process includes an air sucking process for sucking air inside the groove during the back surface grinding process, an air pressure monitoring process for detecting and monitoring air pressure inside the groove during the air sucking process and a finish timing determining process for the determining timing for finishing the back surface grinding process based on the air pressure detected during the air pressure monitoring process.