Organic semiconductor device and process of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYasuyuki Arai, Noriko Shibata
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Abstract
The present invention is for providing a sophisticated active matrix type organic semiconductor device. A first electrode 102 is formed on an insulated surface. A second insulated film 104 is formed on the first electrode 102 via a first insulated film 103. An organic semiconductor film is formed on an opening part formed on the second insulated film 104 and the second insulated film 104. An organic semiconductor film 105 is obtained by polishing the same until the second insulated film 104 is exposed. Furthermore, by forming a second electrode 106 and a third electrode 107 on the organic semiconductor film 105, an organic semiconductor device of the present invention can be obtained.
Claims20
A process of manufacturing an organic semiconductor device, comprising:
- forming a first electrode over an insulated surface,
- forming a first insulated film over the first electrode,
- forming a second insulated film over the first insulated film,
- forming an opening part at a position with the second insulated film superimposed over the first electrode via the first insulated film,
- forming an organic semiconductor film over the opening part and the second insulated film,
- polishing the organic semiconductor film until the second insulated film is exposed, and
- forming a second electrode and a third electrode without contact with each other over the organic semiconductor film.
A process of manufacturing an organic semiconductor device, comprising:
- forming a first electrode over an insulated surface,
- forming a first insulated film over the first electrode,
- forming a second insulated film over the first insulated film,
- forming an opening part at a position with the second insulated film superimposed over the first electrode via the first insulated film,
- forming an organic semiconductor film over the opening part and the second insulated film by the spin coating method,
- eliminating the organic semiconductor film formed over the second insulated film, and
- forming a second electrode and a third electrode without contact with each other over the organic semiconductor film formed over the opening part.
A process of manufacturing an organic semiconductor device, comprising:
- forming a first electrode over an insulated surface,
- forming a first insulated film over the first electrode,
- forming a second insulated film over the first insulated film,
- forming an opening part at a position with the second insulated film superimposed over the first electrode via the first insulated film,
- forming an organic semiconductor film over the opening part and the second insulated film by the spin coating method,
- applying an ashing treatment to the organic semiconductor film until the second insulated film is exposed, and
- forming a second electrode and a third electrode without contact with each other over the organic semiconductor film.
A process of manufacturing an organic semiconductor device, comprising:
- forming a first electrode over an insulated surface,
- forming a first insulated film over the first electrode,
- forming a second insulated film over the first insulated film,
- forming an opening part at a position with the second insulated film superimposed over the first electrode via the first insulated film,
- forming an organic semiconductor film over the opening part and the second insulated film by the spin coating method,
- polishing the organic semiconductor film by the chemical mechanical polishing method until the second insulated film is exposed, and
- forming a second electrode and a third electrode over the organic semiconductor film.
Dependencies are inferred from the claim text.