MRAM sense layer isolation
AssigneeMicron Technology, Inc.
InventorKaren Signorini
Life of this patent
Estimating the term…
Abstract
A process for forming an MRAM element. The process comprises patterning a globally deposited sense layer and then forming a spacer about the patterned sense layer so as to cover the lateral edges of the patterned sense layer. Subsequently, a globally deposited tunnel layer and fixed layer are patterned so as to define the MRAM element. Preferably, the pinned layer is patterned such that the outer lateral edges of the pinned layer is displaced in a direction parallel to the substrate from the lateral edges of the patterned sensed layer thereby reducing coupling effects between the two layers. Moreover, the use of a spacer during the process further inhibits shorting between the sense layer and the pinned layer during patterning of the pinned layer.
Claims18
A process for forming a magnetic memory element, the process comprising:
- forming a first magnetic layer on a substrate;
- forming a junction layer on the first magnetic layer;
- forming a second magnetic layer on the junction layer wherein the first and second magnetic layers are selected so as to have a programmable differential magnetic field therebetween;
- patterning the second magnetic layer so as to define a first width;
- and
- patterning the junction layer and the first magnetic layer so as to define a second width that is a least greater than the first width to thereby reduce magnetic coupling between the first and second magnetic layers.
A process for forming a magnetic memory device on a substrate having a conductor formed therein, the process comprising:
- forming a magnetic stack structure having upper and lower magnetic layers with a tunnel layer interposed therebetween on the substrate so as to overlie the conductor;
- patterning the upper magnetic layer so as to define lateral edges and a first width;
- forming spacers adjacent the lateral edges of the upper magnetic layer;
- and
- patterning the spacers, tunnel layer, and lower magnetic layer so as to define a second width that is at least greater than the first width, wherein the spacer inhibits contact between the upper and lower magnetic layers during etching of the lower magnetic layer to thereby reduce magnetic coupling between the upper and lower magnetic layers.
Dependencies are inferred from the claim text.