HTS film-based electronic device characterized by low ELF and white noise
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorYehoshua Dan Agassi
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AssigneeThe United States of America as represented by the Secretary of the Navy
InventorYehoshua Dan Agassi
Estimating the term…
A film-based HTS device comprises a substrate and a superconducting film. A peripheral portion of the film is a-axis-aligned material which is so situated on the substrate as to describe a-b planar barriers which are perpendicular to the substrate and which in parallel fashion border upon the entire periphery of the film. The a-b planar barriers serve to block vortices which nucleate at the film's periphery, thereby attenuating the overall vortex activity associated with the film, thereby attenuating the ELF and white noise which are normally prevalent in superconductor devices. Effectiveness in terms of arresting vortex motion may be increased by providing an interior film portion which is also a-axis-aligned material. It may be preferable to provide an interior film portion which is c-axis-aligned material, since this is easier to make and the a-axis-aligned peripheral portion of the film will be sufficiently effective in terms of “pinning” the vortices.
A combination which is adaptable to use in film-based high temperature superconductor electronic apparatus, said combination comprising a substrate and a film, said substrate having a substrate surface, said film including crystalline high temperature superconductor material, said film including at least three exterior film regions and an interior film region, said exterior film regions circumscribing said interior film region, said exterior film regions including a-axis-aligned high temperature superconductor material, said film being disposed on said substrate surface so that said a-axis-aligned high temperature superconductor material defines therein a plurality of a-b planes which are at least approximately perpendicular to said substrate, said exterior film regions differing from each other in terms of the b-axial orientation of said a-b planes relative to said substrate surface, said film at least approximately describing a geometric plane and a film outline, said geometric plane being at least approximately parallel to said substrate surface, said film outline lying in said geometric plane and defining an at least approximately polygonal shape, said film outline being formed by at least three at least approximately linear film outline edges, each said exterior film region being bounded by a corresponding said film outline edge, said b-axial orientation of said a-b planes of each said exterior film region being at least approximately parallel to the corresponding said film outline edge.
A combination which is adaptable to use in film-based high temperature superconductor electronic apparatus, said combination comprising a substrate and a film, said substrate having a substrate surface, said film including a-axis-aligned crystalline high temperature superconductor material, said film being disposed on said substrate surface so that said a-axis-aligned high temperature superconductor material defines therein a plurality of a-b planes which are at least approximately perpendicular to said substrate, wherein:
A superconducting device comprising a substrate and a film upon said substrate, said film defining an at least approximately polygonal film perimeter, said film perimeter being formed by at least three at least approximately straight geometric sides, said film having a peripheral film portion and a central film portion, said peripheral film portion surrounding said central film portion, said peripheral film portion comprising a-axis-aligned superconducting material characterized by the formation of at least three at least approximately straight lattice walls describing a-axis-b-axis planes which are at least generally perpendicular to said substrate, wherein said lattice walls border upon at least substantially all of said film perimeter so as to be at least generally parallel with respect to said film perimeter, each said lattice wall bordering upon a corresponding said geometric side.
A superconducting device comprising a substrate and a film upon said substrate, said film defining a film perimeter, said film comprising a-axis-aligned superconducting material characterized by the formation of plural lattice walls describing a-axis-b-axis planes which are at least generally perpendicular to said substrate, wherein:
Apparatus adaptable to utilization as part of a superconductor device, said apparatus comprising superconducting film and a substrate therefor, said superconducting film at least substantially describing a planar geometric shape that is delimited by an outside film border, said superconducting film including a-axis superconducting film that at least substantially forms said outside film border, said a-axis superconducting film having a-b planar submolecular crystalline structures that are at least substantially normal to said substrate, said a-b planar submolecular structures being so arranged as to form blockade means along said outside film border, said blockade means being characterized by at least substantial parallelism with respect to to said outside film border.
Dependencies are inferred from the claim text.