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US 6,635,323 B2Granted
Raw material for production of GaAs crystals
OwnerTadashi Kihara, Takeharu Yamamura +1inventors
InventorsTadashi Kihara, Takeharu Yamamura, Kenichi Tayama
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Abstract
The present invention provides a raw material 1 used for production of GaAs crystals by utilizing solidification of melt, wherein As 12 is accommodated in the inside of Ga 10, 11. Because As 12 is covered with Ga 10, 11, As 12 is not brought into contact with the air and can thus be conveyed without oxidizing As 12. The raw material 1 can be heated and melted as such to produce GaAs crystals by the Czochralski method.
Claims4
A vessel/raw material for production of GaAs crystals comprising:
- an oxidation-sensitive material comprising As;
- a lid having a solid-state from consisting essentially of Ga;
- the vessel having a solid-state form consisting essentially of Ga and having a sealed space;
- wherein the oxidation-sensitive material is contained in a sealed state within the sealed space of the vessel.
1 more element
Dependencies are inferred from the claim text.