Method of heat treatment
AssigneeTokyo Electron Limited
InventorsHitoshi Kato, Yoshiyuki Fujita, Yukio Tojo, Toshitake Tsuda
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Abstract
A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C.
Claims8
A thermal processing method comprising:
- a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having an irregular profile, and
- a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C., wherein
- the loading step includes a step of setting a temperature in the processing container at a temperature lower than 400° C.
A thermal processing method comprising:
- a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having an irregular profile, and
- a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C.
- a temperature raising step of raising a temperature in the processing container to a range of 550 to 750° C., between the loading step and the doping step, and
- a step of subjecting the object to be processed to a cycle-purge process, between the loading step and the temperature raising step.
A thermal processing method comprising
- a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having an irregular profile, and
- a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C.,
- a temperature raising step of raising a temperature in the processing container to a range of 550 to 750° C., between the loading step and the doping step, and
- a step of supplying the doping gas into the processing container to a predetermined pressure, between the loading step and the temperature raising step.
A thermal processing method comprising:
- a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having an irregular profile, and
- a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C., wherein
- the doping step includes a step of maintaining a pressure in the processing container at a range of 100 to 400 Torr.
A thermal processing method comprising:
- a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having an irregular profile,
- a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C., and
- a temperature lowering step of lowering the temperature in the processing container to a predetermined temperature while continuing to supply the doping gas and maintaining a pressure in the processing container at a predetermined pressure.
Dependencies are inferred from the claim text.