Method of etching and cleaning using fluorinated carbonyl compounds

A method of plasma etching comprising etching a surface of a non-silicon or non-silicon dioxide material with an etching composition which comprises at least:

• one etchant compound having a formula selected from the group consisting of F—CO—[(CR1R2)m—CO]n—F and F—CO—R3—CO—F, and wherein:
• m=0, 1, 2, 3, 4, or 5;
• n=0 or 1;
• R1 & R2 represent H, F or CxHyFz;
• wherein:
• x=1 or 2;
• and
• y+z=2x+1;
• R3 represents [R4C═R5C]C(R4)═C(R5), C(R6R7)═C or C≡C;
• wherein:
• R4-7 represent H, F, or CxHyFz;
• wherein:
• x=1 or 2;
• and
• y+z=2x+1;
• and
• another constituent in addition to said etchant compound for aiding etching and/or imparting selectivity.

A method of cleaning a surface to remove residue adhered thereto comprising plasma cleaning said surface by contacting it with an etching composition comprising at least the following constituents:

• an etchant compound in an amount no less than 50% by volume of said etching composition and having a formula selected from the group consisting of F—CO—[(CR1R2)m—CO]n—F and F—CO—R3—CO—F, and wherein:
• m=0, 1, 2, 3, 4, or 5;
• n=1;
• R1 & R2 represent H, F or CxHyFz;
• wherein:
• x=1 or 2;
• and
• y+z=2x+1;
• R3 represents C(R4)═C(R5), C(R6R7)═C or C≡C;
• wherein:
• R4-7 represent H, F, or CxHyFz;
• wherein:
• x=1 or 2;
• and
• y+z=2x+1;
• and
• at least one etchant-modifier to impart selectivity to the plasma etching, said etchant-modifier being substantially free of perfluorinated compounds having a GWP of greater than 5000 and sulfur-containing compounds with perfluorinated side chains having a GWP of greater than 1500.

An etching composition comprising:

• (A) an etchant compound in an amount no less than 50% by volume of said etching composition and having a general formula selected from the group consisting of F—CO—[(CR1R2)m—CO]n—F and F—CO—R3—CO—F, and wherein:
• m=0, 1, 2, 3, 4, or 5;
• n=1;
• R1 & R2 represent H, F or CxHyFz;
• wherein:
• x=1 or 2;
• and
• y+z=2x+1;
• R3 represents C(R4)═C(R5), C(R6R7)═C or C≡C;
• wherein:
• R4-7 represent H, F, or CxHyFz;
• wherein:
• x=1 or 2;
• and
• y+z=2x+1;
• and
• (B) another constituent in addition to said etchant compound for aiding etching and/or imparting selectivity, said another constituent being substantially free of perfluorinated compounds having a GWP of greater than 5000 and sulfur-containing compounds with perfluorinated side chains having a GWP of greater than 1500.